A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

David Kiefer, Liyang Yu, Erik Fransson, Andrés Gómez, Daniel Primetzhofer, Aram Amassian, Mariano Campoy-Quiles, Christian Müller

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.
Original languageEnglish (US)
Pages (from-to)1600203
JournalAdvanced Science
Volume4
Issue number1
DOIs
StatePublished - Sep 30 2016

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