A SIMS study on Mg diffusion in Zn 0.94 Mg 0.06 O/ZnO heterostructures grown by metal organic chemical vapor deposition

L. L. Yang, Q. X. Zhao, G. Z. Xing, D. D. Wang, Tao Wu, M. Willander, I. Ivanov, J. H. Yang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Zn 0.94 Mg 0.06 O/ZnO heterostructures have been grown on 2 in. sapphire wafer using metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) mapping demonstrates that Mg distribution on the entire wafer is very uniform (standard deviation of Mg concentration/mean Mg concentration = 1.38%) with average concentration of ∼6%. The effect of annealing on the Mg diffusion in Zn 0.94 Mg 0.06 O/ZnO heterostructures has been investigated in detail by using secondary ion mass spectrometry (SIMS). All the Mg SIMS depth profiles have been fitted by three Gaussian distribution functions. The Mg diffusion coefficient in the as-grown Zn 0.94 Mg 0.06 O layer deposited at 700 °C is two orders of magnitude lower than that of annealed samples, which clearly indicates that the deposition temperature of 700 °C is much more beneficial to grow ZnMgO/ZnO heterostructures and quantum wells.

Original languageEnglish (US)
Pages (from-to)8629-8633
Number of pages5
JournalApplied Surface Science
Volume257
Issue number20
DOIs
StatePublished - Aug 1 2011

Keywords

  • Diffusion coefficient
  • Heterostructures
  • Secondary ion mass spectrometry

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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