a-Si:H based two-dimensional photonic crystals

E. Bennici*, S. Ferrero, F. Giorgis, C. F. Pirri, R. Rizzoli, P. Schina, L. Businaro, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

We describe the fabrication processes of silicon-based two-dimensional photonic crystals (2D-PCs) with a photonic band gap in the near-IR range. The procedures involve electron beam lithography followed by an anisotropic etching step of hydrogenated amorphous silicon thin films deposited by plasma enhanced chemical vapor deposition. Micrometric and submicrometric arrays of cylindrical holes are transferred using a poly-methylmethacrylate resist layer as a mask. A careful comparison between standard parallel plate reactive ion etching and inductively coupled plasma etching techniques is performed, aimed at obtaining periodic structures with high aspect ratio and good profile sharpness.

Original languageEnglish (US)
Pages (from-to)539-543
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume16
Issue number3-4
DOIs
StatePublished - Mar 1 2003
EventSymposium H of the Spring Meeting of the Europe (E-MRS-02H) - Strasbourgh, France
Duration: Jun 18 2002Jun 21 2002

Keywords

  • Amorphous silicon
  • Anisotropic etching
  • Photonic crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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