A route to strong p-doping of epitaxial graphene on SiC

Yingchun Cheng, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.
Original languageEnglish (US)
Pages (from-to)193304
JournalApplied Physics Letters
Volume97
Issue number19
DOIs
StatePublished - Nov 10 2010

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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