Studies performed by our group on composition-structure-property relationships of Pb(ZrxT1-x)O3 (PZT)-based heterostructure capacitors are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO2, and La0.5Sr0.5CoO3 layers and their integration into heterostructure capacitors suitable for nonvolatile memories. The main objective of our research was to determine the influence of deposition parameters and layer processing on the composition, structure, and properties of PZT-based capacitors, with the goal of controlling fatigue, retention, and imprint effects. The work discussed relates mainly to the synthesis of films by ion beam sputter-deposition (IBSD) and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Limited comparisons are presented between structural characteristics and properties of PZT capacitors produced by IBSD and PLAD and those synthesized by the solgel technique. The work reviewed indicates that the substrate, template layer and/or bottom electrode material type contribute to the control of composition, structure, and properties of PZT-based capacitors.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry