A Raman study of diamond film growth on Co-cemented Tungsten carbide

Riccardo Polini*, Enrico Traversa, Alessandra Marucci, Giorgio Mattei, Giancarlo Marcheselli

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Phase purity and crystallinity of diamond films grown by hot filament chemical vapor deposition on ISO-grade K10 cemented carbide [94.2 weight percent (w/o) WC-5.8 w/o Co] were studied by Raman spectroscopy as a function of substrate temperature, gas phase composition, and substrate pretreatments. High-quality diamond films were grown using 0.5% CH4/H2 in a rather narrow range of substrate temperatures (750 to 760°C). In all the deposited coatings, the first-order Raman band of diamond is detected at 1337 cm-1. This fact indicates that a 2 GPa residual compressive stress is present in the diamond phase. The linewidth of the diamond Raman peak increases with deposition temperature. This effect has been ascribed to a higher density of defects in diamond crystallites. It has been observed that Co removal from the substrate surface by wet chemical etching before deposition is less effective than a careful selection of deposition parameters to reduce the codeposition of nondiamond carbon phases. This finding has been attributed to the fast diffusion of the binder from the bulk to the substrate surface, even for the etched substrates.

Original languageEnglish (US)
Pages (from-to)1371-1375
Number of pages5
JournalJournal of the Electrochemical Society
Volume144
Issue number4
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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