A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

Tahani H. Flemban, Mohammed Haque, Idris A. Ajia, Norah M. Alwadai, Somak Mitra, Tao Wu, Iman S. Roqan

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.
Original languageEnglish (US)
Pages (from-to)37120-37127
Number of pages8
JournalACS Applied Materials & Interfaces
Volume9
Issue number42
DOIs
StatePublished - Oct 16 2017

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