A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

H. S. Lim*, Y. L. Lam, Y. C. Chan, Boon Ooi, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The use of a one-step gray mask lithography and reactive ion etching technique with low energy P++ion implantation induced disordering process to fabricate monolithic multiple wavelength laser diode (MWLD) across an InGaAs-InGaAsP quantum well wafer was reported. A total of 10 channels MWLDs with lasing wavelength ranging from 1.47 μm to 1.55 μm were obtained. High material quality was maintained after intermixing using this technique.

Original languageEnglish (US)
Pages412-413
Number of pages2
StatePublished - Dec 1 2001
Event27th European Conference on Optical Communication - Amsterdam, Netherlands
Duration: Sep 30 2001Oct 4 2001

Other

Other27th European Conference on Optical Communication
CountryNetherlands
CityAmsterdam
Period09/30/0110/4/01

ASJC Scopus subject areas

  • Engineering(all)

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