Abstract
An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSxjunction of dichalcogenide vacancies enables Si-MoS2contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.
Original language | English (US) |
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Title of host publication | 2016 IEEE International Electron Devices Meeting (IEDM) |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 14.3.1-14.3.4 |
Number of pages | 1 |
ISBN (Print) | 9781509039029 |
DOIs | |
State | Published - Dec 2016 |