A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET

Ying-Tsan Tang; Kai-Shin Li; Lain-Jong Li; Ming-yang Li; Chang-Hsien Lin; Yi-Ju Chen; Chun-Chi Chen; Chuan-Jung Su; Bo-Wei Wu; Cheng-San Wu; Min-Cheng Chen; Jia-Min Shieh; Wen-Kuan Yeh; Po-Cheng Su; Tahui Wang; Fu-Liang Yang; Chenming Hu

doi:10.1109/IEDM.2016.7838415

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET

Ying-Tsan Tang, Kai-Shin Li, Lain-Jong Li, Ming-yang Li, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, Chuan-Jung Su, Bo-Wei Wu, Cheng-San Wu, Min-Cheng Chen, Jia-Min Shieh, Wen-Kuan Yeh, Po-Cheng Su, Tahui Wang, Fu-Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSxjunction of dichalcogenide vacancies enables Si-MoS2contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.

Original language	English (US)
Title of host publication	2016 IEEE International Electron Devices Meeting (IEDM)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	14.3.1-14.3.4
Number of pages	1
ISBN (Print)	9781509039029
DOIs	https://doi.org/10.1109/IEDM.2016.7838415
State	Published - Dec 2016

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10.1109/IEDM.2016.7838415

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Tang, Y-T., Li, K-S., Li, L-J., Li, M., Lin, C-H., Chen, Y-J., Chen, C-C., Su, C-J., Wu, B-W., Wu, C-S., Chen, M-C., Shieh, J-M., Yeh, W-K., Su, P-C., Wang, T., Yang, F-L., & Hu, C. (2016). A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET. In 2016 IEEE International Electron Devices Meeting (IEDM) (pp. 14.3.1-14.3.4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM.2016.7838415

Tang, Ying-Tsan ; Li, Kai-Shin ; Li, Lain-Jong ; Li, Ming-yang ; Lin, Chang-Hsien ; Chen, Yi-Ju ; Chen, Chun-Chi ; Su, Chuan-Jung ; Wu, Bo-Wei ; Wu, Cheng-San ; Chen, Min-Cheng ; Shieh, Jia-Min ; Yeh, Wen-Kuan ; Su, Po-Cheng ; Wang, Tahui ; Yang, Fu-Liang ; Hu, Chenming. / A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET. 2016 IEEE International Electron Devices Meeting (IEDM). Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 14.3.1-14.3.4

@inproceedings{848f07b094424e1c85ab2453141bcc4b,

title = "A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET",

abstract = "An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSxjunction of dichalcogenide vacancies enables Si-MoS2contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.",

author = "Ying-Tsan Tang and Kai-Shin Li and Lain-Jong Li and Ming-yang Li and Chang-Hsien Lin and Yi-Ju Chen and Chun-Chi Chen and Chuan-Jung Su and Bo-Wei Wu and Cheng-San Wu and Min-Cheng Chen and Jia-Min Shieh and Wen-Kuan Yeh and Po-Cheng Su and Tahui Wang and Fu-Liang Yang and Chenming Hu",

note = "KAUST Repository Item: Exported on 2021-02-10 Acknowledgements: This simulation work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan; Applied Materials, inc and NCTU-UCB I-RiCE program.",

year = "2016",

month = dec,

doi = "10.1109/IEDM.2016.7838415",

language = "English (US)",

isbn = "9781509039029",

pages = "14.3.1--14.3.4",

booktitle = "2016 IEEE International Electron Devices Meeting (IEDM)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Tang, Y-T, Li, K-S, Li, L-J, Li, M, Lin, C-H, Chen, Y-J, Chen, C-C, Su, C-J, Wu, B-W, Wu, C-S, Chen, M-C, Shieh, J-M, Yeh, W-K, Su, P-C, Wang, T, Yang, F-L & Hu, C 2016, A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET. in 2016 IEEE International Electron Devices Meeting (IEDM). Institute of Electrical and Electronics Engineers (IEEE), pp. 14.3.1-14.3.4. https://doi.org/10.1109/IEDM.2016.7838415

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET. / Tang, Ying-Tsan; Li, Kai-Shin; Li, Lain-Jong; Li, Ming-yang; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Su, Chuan-Jung; Wu, Bo-Wei; Wu, Cheng-San; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Su, Po-Cheng; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming.

2016 IEEE International Electron Devices Meeting (IEDM). Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 14.3.1-14.3.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET

AU - Tang, Ying-Tsan

AU - Li, Kai-Shin

AU - Li, Lain-Jong

AU - Li, Ming-yang

AU - Lin, Chang-Hsien

AU - Chen, Yi-Ju

AU - Chen, Chun-Chi

AU - Su, Chuan-Jung

AU - Wu, Bo-Wei

AU - Wu, Cheng-San

AU - Chen, Min-Cheng

AU - Shieh, Jia-Min

AU - Yeh, Wen-Kuan

AU - Su, Po-Cheng

AU - Wang, Tahui

AU - Yang, Fu-Liang

AU - Hu, Chenming

N1 - KAUST Repository Item: Exported on 2021-02-10 Acknowledgements: This simulation work was performed by the National Nano Device Laboratories facilities and supported by the Ministry of Science and Technology, Taiwan; Applied Materials, inc and NCTU-UCB I-RiCE program.

PY - 2016/12

Y1 - 2016/12

N2 - An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSxjunction of dichalcogenide vacancies enables Si-MoS2contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.

AB - An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSxjunction of dichalcogenide vacancies enables Si-MoS2contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.

UR - http://hdl.handle.net/10754/656022

UR - https://ieeexplore.ieee.org/document/7838415/

UR - http://www.scopus.com/inward/record.url?scp=85014424151&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2016.7838415

DO - 10.1109/IEDM.2016.7838415

M3 - Conference contribution

AN - SCOPUS:85014424151

SN - 9781509039029

SP - 14.3.1-14.3.4

BT - 2016 IEEE International Electron Devices Meeting (IEDM)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET

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