A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2FET

Ying-Tsan Tang, Kai-Shin Li, Lain-Jong Li, Ming-yang Li, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, Chuan-Jung Su, Bo-Wei Wu, Cheng-San Wu, Min-Cheng Chen, Jia-Min Shieh, Wen-Kuan Yeh, Po-Cheng Su, Tahui Wang, Fu-Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSxjunction of dichalcogenide vacancies enables Si-MoS2contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.
Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting (IEDM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages14.3.1-14.3.4
Number of pages1
ISBN (Print)9781509039029
DOIs
StatePublished - Dec 2016

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