A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures

H. S. Lim*, V. Aimez, Boon Ooi, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We report the fabrication of multiple wavelength chips in InGaAs-InGaAsP laser structure using a novel ion implantation induced quantum-well (QW) intermixing technique. This technique first consists of using a gray mask photolithography and reactive ion etching process to create a SiO2 implant mask with variable thickness on the sample. This is followed by a single 360-keV phosphorus ion implantation at a dose of 1 × 1014 cm-2 at 200°C, which creates different amounts of point defects in the sample depending on the local thickness of the SiO2 mask. A subsequent thermal annealing step induces QW intermixing through the diffusion of the point defects across the structure. With this technique, we have successfully fabricated 10-channel multiple wavelength laser diodes, with lasing wavelength spreading over 85 nm (between 1.47 and 1.55 μm), monolithically integrated on a single chip. Only a limited increase of threshold current density of 17% (i.e., from 1.2 to 1.4 kA/cm2), has been observed between the least intermixed and the most intermixed lasers.

Original languageEnglish (US)
Pages (from-to)594-596
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number5
DOIs
StatePublished - May 1 2002

Keywords

  • Gray mask
  • Implantation induced disordering
  • InGaAs-InGaAsP
  • Multiple wavelength lasers
  • Quantum-well intermixing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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