A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs

C. Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, Muhammad Mustafa Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J. W. Yang, W. Xiong, H. H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

28 Scopus citations

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