A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs

C. Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, Muhammad Mustafa Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J. W. Yang, W. Xiong, H. H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

26 Scopus citations

Abstract

If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction tuning of single metal electrode on high-k dielectric. Compared to planar SOI devices, our optimized SOI FinFETs with metal/high-k stack showed high field mobility for a (110)/〈110〉 nMOSFETs, which increased almost two times. By optimizing the workfunction and the strain effect, we achieved an Ion of 930μA/μm and 680μA/μm for nMOSFETs and pMOSFETs without implementing any other stress engineering process.

Original languageEnglish (US)
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - Dec 1 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period12/10/0612/13/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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