A novel design and characterization of oxide confined 850 nm VCSEL

S. M. Mitani, M. S. Alias, K. A. Sharif, S. A. Mohamad, P. K. Choudhury

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The present communication reports an investigation of a new kind of VCSEL with the operating wavelength at 850 nm of the electromagnetic spectrum. The efficacy of the device lies in that the oxide layer is introduced in order to achieve a better confinement of light in the central portion of the device. Further, the introduction of the low-doped DBR layers near the spacers, and the barrier reduction layers in the DBRs finally present much better efficiency of the device. Simulations have been performed for the analyses of several features of the proposed VCSEL in respect of the different controlling parameters for the device, e.g. the intensity, power and current distributions, gain response, output intensity profile, slope efficiency etc.

Original languageEnglish (US)
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages63-64
Number of pages2
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore
Duration: Sep 11 2006Sep 14 2006

Other

Other2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
CountrySingapore
CityNanyang
Period09/11/0609/14/06

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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