A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes

Paul Von Dollen, Siddha Pimputkar, Mohammed Abo Alreesh, Shuji Nakamura, James S. Speck

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14 Scopus citations

Abstract

We report recent results of bulk GaN crystal growth using the sodium flux method in a new crucible-free growth system. We observed a (0001) Ga face (+c-plane) growth rate >50 µm/h for growth at a N2 overpressure of ~5 MPa and 860 °C, which is the highest crystal growth rate reported for this technique to date. Omega X-ray rocking curve (ω-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were 1020 atoms/cm3. By monitoring the nitrogen pressure decay over the course of the crystal growth, we developed an in situ method that correlates gas phase changes with precipitation of GaN from the sodium-gallium melt. Based on this analysis, the growth rate may have actually been as high as 90 µm/h, as it would suggest GaN growth ceased prior to the end of the run. We also observed gas phase behavior identified as likely characteristic of GaN polynucleation.
Original languageEnglish (US)
Pages (from-to)67-72
Number of pages6
JournalJournal of Crystal Growth
Volume456
DOIs
StatePublished - Sep 9 2016
Externally publishedYes

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