A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation

Yabing Qi*, Tissa Sajoto, Michael Kröger, Alexander M. Kandabarow, Wunjun Park, Stephen Barlow, Eung Gun Kim, Leszek Wielunski, L. C. Feldman, Robert A. Bartynski, Jean-Luc Bredas, Seth R. Marder, Antoine Kahn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

Molybdenum tris-[l ,2-bis(trifluoromethyl)ethane-l,2-dithiolene] (Mo(tfd) 3) is investigated as a P-dopant for organic semiconductors. With an electron affinity of 5.6 eV, Mo(tfd) 3 is a strong oxidizing agent suitable for the oxidation of several hole transport materials (HTMs). Ultraviolet photoemission spectroscopy confirms -doping of the standard HTM N,N-di-[(l-naphthyl)-N,N-diphenyl]-l, l'biphenyl-4,4'-diamine (a-NPD). Strong enhancement of hole injection at a-NPD/Au interfaces is achieved via doping-induced formation of a narrow depletion region in the organic semiconductor. Variable-temperature current-voltage measurements on a-NPD: Mo(tfd) 3 (0-3.8 mol%) yield an activation energy for polaron transport that decreases with increasing doping concentration, which is consistent with the effect of the doping-induced filling of traps on hopping transport. Good stability of Mo(tfd)3 versus diffusion in the a-NPD host matrix is demonstrated by Rutherford backscattering for temperatures up to 110 °C. Density functional theory (DFT) calculations are performed to obtain geometries and electronic structures of isolated neutral and anionic Mo(tfd) 3 molecules.

Original languageEnglish (US)
Pages (from-to)524-531
Number of pages8
JournalChemistry of Materials
Volume22
Issue number2
DOIs
StatePublished - Jan 26 2010

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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