A general approach to semimetallic, ultra-high-resolution, electron-beam resists

Bao Yu Zong*, Gu Chang Han, Yuan Kai Zheng, Li Hua An, Tie Liu, Ke Bin Li, Jin Jun Qiu, Zaibing Guo, Ping Luo, Hao Min Wang, Bo Liu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Scopus citations

    Abstract

    Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.

    Original languageEnglish (US)
    Pages (from-to)1437-1443
    Number of pages7
    JournalAdvanced Functional Materials
    Volume19
    Issue number9
    DOIs
    StatePublished - May 8 2009

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

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