A Fully Transparent Resistive Memory for Harsh Environments

Po-Kang Yang, Chih-Hsiang Ho, Der-Hsien Lien, Jose Ramon Duran Retamal, Chen-Fang Kang, Kuan-Ming Chen, Teng-Han Huang, Yueh-Chung Yu, Chih-I Wu, Jr-Hau He

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19 Scopus citations

Abstract

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.
Original languageEnglish (US)
JournalScientific Reports
Volume5
Issue number1
DOIs
StatePublished - Oct 12 2015

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