InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|State||Published - May 2006|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials