A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

D. Zhu*, M. J. Kappers, P. M F J Costa, C. McAleese, F. D G Rayment, G. R. Chabrol, D. M. Graham, P. Dawson, E. J. Thrush, J. T. Mullins, C. J. Humphreys

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy.

Original languageEnglish (US)
Pages (from-to)1819-1823
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number7
DOIs
StatePublished - May 2006
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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