A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

Abdullah Saud Mohammed Almansouri, Mahmoud H. Ouda, Khaled N. Salama

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.
Original languageEnglish (US)
Pages (from-to)2409-2415
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume66
Issue number5
DOIs
StatePublished - Jan 9 2018

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