A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion

Ifiok Umoh*, Talal Al-Attar, Tokunbo Ogunfunmi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.

Original languageEnglish (US)
Title of host publicationConference Record of the 44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010
Pages998-1001
Number of pages4
DOIs
StatePublished - 2010
Externally publishedYes
Event44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010 - Pacific Grove, CA, United States
Duration: Nov 7 2010Nov 10 2010

Other

Other44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010
CountryUnited States
CityPacific Grove, CA
Period11/7/1011/10/10

ASJC Scopus subject areas

  • Signal Processing
  • Computer Networks and Communications

Fingerprint Dive into the research topics of 'A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion'. Together they form a unique fingerprint.

Cite this