740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Kazuhiro Ohkawa*, Tomomasa Watanabe, Masanori Sakamoto, Akira Hirako, Momoko Deura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.

Original languageEnglish (US)
Pages (from-to)13-16
Number of pages4
JournalJournal of Crystal Growth
Volume343
Issue number1
DOIs
StatePublished - Mar 15 2012

Keywords

  • A1. Crystal structure
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting IIIV materials
  • B3. Light emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of '740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE'. Together they form a unique fingerprint.

Cite this