630-nm red InGaN micro-light-emitting diodes (

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrated 10 × 10 arrays of InGaN 17 μm × 17 μm micro-light-emitting diodes (μLEDs) with a peak wavelength from 662 to 630 nm at 10–50 A∕cm2. The on-wafer external quantum efficiency reached 0.18% at 50 A∕cm2. The output power density of the red μLEDs was obtained as 1.76 mW∕mm2, which was estimated to be higher than that of 20 μm × 20 μm AlInGaP red μLEDs (∼630 nm). Finally, we demonstrate that InGaN red/green/blue μLEDs could exhibit a wide color gamut covering 81.3% and 79.1% of the Rec. 2020 color space in CIE 1931 and 1976 diagrams, respectively.
Original languageEnglish (US)
Pages (from-to)1796
JournalPhotonics Research
Volume9
Issue number9
DOIs
StatePublished - Aug 23 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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