50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

Ahmed Emira, M. AbdelGhany, M. Elsayed, Amro M. Elshurafa, S. Sedky, Khaled N. Salama

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.
Original languageEnglish (US)
Pages (from-to)4683-4693
Number of pages11
JournalIEEE Transactions on Industrial Electronics
Volume60
Issue number10
DOIs
StatePublished - Aug 17 2012

Fingerprint

Dive into the research topics of '50V All-PMOS Charge Pumps Using Low-Voltage Capacitors'. Together they form a unique fingerprint.

Cite this