This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10 5 at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594μs684μs to 684μs786μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.
- High-temperature electronics
- photodetectors (PDs)
- silicon carbide (SiC)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials