We demonstrate 3D monolithically integrated two-level stacked 1-transistor/1-resistor (1T1R) memory cells, using monolayer MoS 2 transistors and few-layer hBN RRAMs, fabricated at temperatures below 150 °C. The stacking process is scalable to an arbitrarily large number of layers and on any substrate material without foreseeable physical limitations. The 1T1R cells can be switched with programming current < 130 μA and voltage < 1 V, close to typical CMOS logic voltages. These cells are promising for in-memory and neuromorphic computing because (1) the hBN RRAM has gradual set and reset switching due to multiple weak-filaments formed along local defects and (2) the MoS 2 transistor has low off-current due to the large band gap of monolayer MoS 2 (E g > 2 eV). We also show that the linearity of RRAM resistance change is well-controlled by the gate voltage of the transistor.
|Original language||English (US)|
|Title of host publication||Technical Digest - International Electron Devices Meeting, IEDM|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||1|
|State||Published - Jan 16 2019|