2D h-BN based RRAM devices

F. M. Puglisi, L. Larcher, C. Pan, N. Xiao, Y. Shi, F. Hui, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.
Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages34.8.1-34.8.4
Number of pages1
ISBN (Print)9781509039012
DOIs
StatePublished - Jan 31 2017
Externally publishedYes

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