1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge

Tien Khee Ng, Soon Fatt Yoon, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Kim Luong Lew, Kah Pin Chen, Eugene A. Fitzgerald, Arthur J. Pitera, Steve A. Ringel, Andrew M. Carlin, Maria Gonzalez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+ n- n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Number of pages5
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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