1.55 μm GaAsGaNAsSbGaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, Tien Khee Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas

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4 Scopus citations

Abstract

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry-Ṕrot resonance method was found to be affected by nitrogen-related defect absorption.

Original languageEnglish (US)
Article number113513
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
StatePublished - Mar 28 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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