Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.
|Original language||English (US)|
|Title of host publication||2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||3|
|State||Published - Mar 1 2019|