150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang, B. Yuan, Y. Shi, F. Palumbo, S. Chen, F. Hui, X. Jing, M. A. Villena, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.
Original languageEnglish (US)
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages258-260
Number of pages3
ISBN (Print)9781538665084
DOIs
StatePublished - Mar 1 2019
Externally publishedYes

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