14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy

Kian Huan Tan*, Soon F. Yoon, Sascha Fedderwitz, Andreas Stöhr, Wan Khai Loke, Satrio Wicaksono, Tien Khee Ng, Mario Weiß, Artur Poloczek, Vitaly Rymanov, Ardhendu Patra, Eduward Tangdiongga, Dieter Jäger

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.

Original languageEnglish (US)
Pages (from-to)590-592
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
StatePublished - Apr 30 2009

Keywords

  • 1.3-μm PDs
  • Dilute-nitride-based photodetectors (PDs)
  • GaNAsSb
  • Molecular beam epitaxy (MBE)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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