We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.
- 1.3-μm PDs
- Dilute-nitride-based photodetectors (PDs)
- Molecular beam epitaxy (MBE)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering