1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

S. Fedderwitz*, Andreas Stöhr, M. Weiß, A. Poloczek, V. Rymanov, A. Patra, D. Jäger, K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, T. K. Ng, E. Tangdiongga

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-μm wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of ∼0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-μm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate =10-12) transmission of 10-Gb Ethernet data at 1.3-μ m wavelength is successfully demonstrated.

Original languageEnglish (US)
Pages (from-to)911-913
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number13
DOIs
StatePublished - Jul 1 2009

Keywords

  • 1.3-μm photodetectors (PDs)
  • Dilute-nitride-based photodetectors (PDs)
  • Fiberoptic transmission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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