100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li, Shuo Wang, Hanxiao Liu, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.
Original languageEnglish (US)
Pages (from-to)1600699
Journalphysica status solidi (b)
Volume254
Issue number8
DOIs
StatePublished - Jan 11 2017

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