100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Dimitra G Georgiadou, James Semple, Abhay A. Sagade, Henrik Forstén, Pekka Rantakari, Yen-Hung Lin, Feras Alkhalil, Akmaral Seitkhan, Kalaivanan Loganathan, Hendrik Faber, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.
Original languageEnglish (US)
JournalNature Electronics
DOIs
StatePublished - Oct 19 2020

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