• Source: Scopus
  • Calculated based on no. of publications stored in Pure and citations from Scopus
20082021

Research activity per year

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Network

Nelson Tansu

  • Lehigh University
  • Center for Optical Technologies

External person

Russell D. Dupuis

  • Georgia Institute of Technology
  • School of Materials Science and Engineering
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors and School of Electrical and Computer Engineering
  • School of Electrical and Computer Engineering

External person

Yik Khoon Ee

  • Lehigh University
  • Philips Lighting
  • Center for Optical Technologies
  • Koninklijke Philips N.V.

External person

Fernando A. Ponce

  • Arizona State University
  • Department of Physics
  • Department of Physics and Astronomy

External person

Shyh Chiang Shen

  • Georgia Institute of Technology
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors and School of Electrical and Computer Engineering
  • School of Electrical and Computer Engineering

External person

Tsung Ting Kao

  • Georgia Institute of Technology
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors and School of Electrical and Computer Engineering
  • School of Electrical and Computer Engineering

External person

Hongping Zhao

  • Lehigh University
  • Case Western Reserve University
  • Center for Optical Technologies
  • Department of Electrical Engineering and Computer Science
  • Department of Electrical Engineering and Computer Science

External person

Alec M. Fischer

  • Arizona State University
  • Department of Physics
  • Department of Physics and Astronomy

External person

Theeradetch Detchprohm

  • Georgia Institute of Technology
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors and School of Electrical and Computer Engineering
  • School of Electrical and Computer Engineering

External person

Hongen Xie

  • Arizona State University
  • Department of Physics
  • Department of Physics and Astronomy

External person

Theeradetch Detchprohm

  • Georgia Institute of Technology

External person

Md Mahbub Satter

  • Georgia Institute of Technology
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors and School of Electrical and Computer Engineering
  • School of Electrical and Computer Engineering

External person

G. S. Huang

  • Center for Optical Technologies
  • Lehigh University

External person

P. Douglas Yoder

  • Georgia Institute of Technology
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors
  • Center for Compound Semiconductors and School of Electrical and Computer Engineering
  • School of Electrical and Computer Engineering

External person

Yong O. Wei

  • Arizona State University
  • Department of Physics and Astronomy
  • Department of Physics

External person

Russell D. Dupuis

  • Georgia Institute of Technology

External person

Jae-Hyun Ryou

  • University of Houston

External person

Zachary Lochner

  • Georgia Institute of Technology
  • Center for Compound Semiconductors

External person

Yuh Shiuan Liu

  • Georgia Institute of Technology
  • Center for Compound Semiconductors

External person

Jiangnan Dai

  • Huazhong University of Science and Technology

External person

Jae Hyun Ryou

  • University of Houston
  • Georgia Institute of Technology
  • Department of Mechanical Engineering
  • Center for Compound Semiconductors
  • Department of Mechanical Engineering

External person

Changqing Chen

  • Huazhong University of Science and Technology
  • Xiamen University
  • Department of Orthopaedic Surgery

External person

Shuo Wang

  • Arizona State University
  • Department of Physics
  • Department of Physics and Astronomy

External person

Wei Guo

  • University of Michigan, Ann Arbor
  • Chinese Academy of Sciences
  • Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications

External person

Jing Zhang

  • Lehigh University
  • Center for Optical Technologies

External person

Junxi Wang

  • Chinese Academy of Sciences

External person

Jianchang Yan

  • Chinese Academy of Sciences

External person

Jinmin Li

  • Chinese Academy of Sciences

External person

Renbo Song

  • Lehigh University
  • Valence Process Equipment Inc.
  • Center for Optical Technologies

External person

Tim Wernicke

  • Technical University of Berlin
  • Institute for Solid State Physics

External person

Jichun Ye

  • Chinese Academy of Sciences

External person

Rajendra Singh

  • Indian Institute of Technology Delhi

External person

Wanjun Cao

  • Lehigh University
  • Center for Advanced Materials and Nanotechnology
  • International Materials Institution

External person

Richard P. Vinci

  • Lehigh University
  • Center for Advanced Materials and Nanotechnology
  • International Materials Institution

External person

Ahmed Y. Alyamani

  • King Abdulaziz City for Science and Technology

External person

Young Jae Park

  • Georgia Institute of Technology

External person

Volkmar Dierolf

  • Lehigh University
  • Center for Optical Technologies
  • Department of Physics
  • Department of Physics

External person

Hua Tong

  • Lehigh University
  • Center for Optical Technologies

External person

Helen M. Chan

  • Lehigh University
  • Center for Advanced Materials and Nanotechnology
  • International Materials Institution

External person

Michael Kneissl

  • Technical University of Berlin
  • Institute for Solid State Physics

External person

Wen Gu

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

Jeffrey M. Biser

  • Lehigh University
  • Center for Advanced Materials and Nanotechnology
  • International Materials Institution

External person

Martin Martens

  • Technical University of Berlin
  • Institute for Solid State Physics

External person

Shaoping Chen

  • South-Central University for Nationalities

External person

Fernando A. Ponce

  • Arizona State University

External person

Jie’an Jiang

  • Chinese Academy of Sciences
  • University of Chinese Academy of Sciences
  • ShanghaiTech University

External person

Moheb Sheikhi

  • Chinese Academy of Sciences
  • University of Chinese Academy of Sciences
  • Ningbo Institute of Materials Technology and Engineering (NIMTE)
  • Chinese Academy of Sciences

External person

Houqiang Xu

  • Chinese Academy of Sciences
  • University of Chinese Academy of Sciences

External person

Zi-hui Zhang

  • Hebei University of Technology

External person

Chunyong Yang

  • South-Central University for Nationalities

External person

Hanling Long

  • Huazhong University of Science and Technology

External person

Ronald A. Arif

  • Lehigh University
  • Center for Optical Technologies

External person

Shuo Wang

  • Arizona State University

External person

Jin Hou

  • South-Central University for Nationalities

External person

Jie Chen

  • Xi'an Jiaotong University

External person

Zhihua Zheng

  • Huazhong University of Science and Technology

External person

Christoph Reich

  • Technical University of Berlin
  • Institute for Solid State Physics

External person

Munir M. El-Desouki

  • King Abdulaziz City for Science and Technology

External person

Sara Pouladi

  • University of Houston

External person

Manjari Garg

  • Indian Institute of Technology Delhi

External person

Shahab Shervin

  • University of Houston

External person

Jonathan D. Poplawsky

  • Lehigh University
  • Center for Optical Technologies
  • Department of Physics
  • Department of Physics

External person

Yi Zhang

  • ParisTech

External person

P. Douglas Yoder

  • Georgia Institute of Technology
  • Center for Compound Semiconductors
  • School of Electrical and Computer Engineering
  • Center for Compound Semiconductors

External person

Maocheng Shan

  • Huazhong University of Science and Technology

External person

Abdulrahman M. Albadri

  • King Abdulaziz City for Science and Technology

External person

Hanxiao Liu

  • Arizona State University

External person

G. Patriarche

  • ComUE Paris-Saclay
  • Université Paris-Saclay
  • CNRS

External person

Pisist Kumnorkaew

  • Lehigh University
  • National Science and Technology Development Agency Thailand
  • Department of Chemical Engineering

External person

Gaoqiang Deng

  • Jilin University

External person

Zhe Chuan Feng

  • Guangxi University

External person

Ye Yu

  • Jilin University

External person

Li Chen

  • Tsinghua University

External person

T. M. Al tahtamouni

  • Qatar University

External person

S. Tafon Penn

  • Lehigh University
  • Center for Optical Technologies
  • Department of Physics

External person

Carlos Gerardo Torres Castanedo

  • Materials Science and Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois, 60208-0001, UNITED STATES

External person

Shuchi Kaushik

  • Physics, Indian Institute of Technology Delhi, New Delhi, National Capital Territory of Delhi, INDIA.

External person

Qian Chen

  • Southeast University, Nanjing
  • Department of Physics

External person

Ja Yeon Kim

  • Korean Photonics Technology Institute, Gwangju, South Korea

External person

Chee Keong Tan

  • Lehigh University
  • Center for Optical Technologies

External person

Jingtao Li

  • University of Electronic Science and Technology of China

External person

Min-Ki Kwon

  • Chosun University

External person

Jing Zhang

  • Lehigh University
  • Center for Optical Technologies

External person

Seung Kyu Oh

  • University of Houston
  • Sunchon National University

External person

Md Mahbub Satter

  • Georgia Institute of Technology
  • Center for Compound Semiconductors

External person

T. Detchprohm

  • Georgia Institute of Technology

External person

R.D. Dupuis

  • Georgia Institute of Technology

External person

Peifen Zhu

  • Lehigh University
  • Center for Optical Technologies

External person

Yong Wei

  • Department of Physics
  • Arizona State University

External person

Haibo Jiang

  • University of Western Australia

External person

Mohammad Khaled Shakfa

  • Department of Physics and Material Sciences Center, Philipps-University of Marburg, Renthof 5; 35032 Marburg Germany

External person

S. Tafon Penn

  • Lehigh University
  • Center for Optical Technologies
  • Department of Physics

External person

Russell Dupuis

  • Georgia Institute of Technology

External person

J. P. Salvestrini

  • CNRS
  • Université de Lorraine
  • GT-Lorraine

External person

Y. El Gmili

  • CNRS
  • GT-Lorraine

External person

Jung Wook Min

  • King Abdullah University of Science and Technology

External person

Weijie Wang

  • University of Dundee

External person

Fernando Ponce

  • Arizona State University

External person

Yuantao Zhang

  • Jilin University

External person

A. Ougazzaden

  • CNRS
  • Georgia Institute of Technology
  • GT-Lorraine
  • School of Electrical and Computer Engineering

External person

Hongen Xie

  • Arizona State University

External person

S. Sundaram

  • CNRS
  • GT-Lorraine

External person

P. L. Voss

  • CNRS
  • Georgia Institute of Technology
  • GT-Lorraine
  • School of Electrical and Computer Engineering

External person

Ravi Varshney

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Hyun Jung Park

  • Sunchon National University

External person

Chen Liu

  • University of Science and Technology of China

External person

Jingwen Chen

  • Huazhong University of Science and Technology

External person

Wei Hong

  • Hubei Key Laboratory of Intelligent Wireless Communications
  • South-Central University for Nationalities

External person

Ming Tian

  • College of Physics Science and Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi University, Nanning 530004, China

External person

Yuanyuan Liu

  • University of Chinese Academy of Sciences
  • CAS - Institute of Semiconductors

External person

Johannes Enslin

  • Technical University of Berlin

External person

Milad Yarali

  • University of Houston

External person

Seung Hwan Kim

  • University of Houston
  • Hongik University

External person

S. Bouchoule

  • ComUE Paris-Saclay
  • Université Paris-Saclay
  • CNRS

External person

Liang Zhang

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

JianWei Ben

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics
  • University of Chinese Academy of Sciences

External person

Junfeng Song

  • Agency for Science, Technology and Research
  • Jilin University

External person

Ange Wang

  • Huazhong University of Science and Technology

External person

Mina Moradnia

  • Department of Mechanical Engineering
  • University of Houston
  • Houston
  • USA
  • Texas Center for Superconductivity at UH (TcSUH) and Advanced Manufacturing Institute (AMI)

External person

G. Le Gac

  • Universite Blaise Pascal
  • Institut Pascal
  • CNRS

External person

Vinay Gupta

  • University of Delhi

External person

Yue Wu

  • University of California at Berkeley
  • Iowa State University
  • Department of Chemistry

External person

Benjamin O. Tayo

  • Lehigh University

External person

Subhajit Karmakar

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Danhao Wang

  • School of Microelectronics, University of Science and Technology of China, Hefei 230029, P.R. China

External person

C. Pradalier

  • GT Lorraine
  • ComUE Paris-Saclay
  • Université Paris-Saclay

External person

Daoyou Guo

  • Zhejiang Sci-Tech University

External person

Shaoping Chen

  • Hubei Key Laboratory of Intelligent Wireless Communications
  • South-Central University for Nationalities

External person

Wael Alghamdi

  • Harvard University, Cambridge, MA 02138, United States

External person

Tore Niermann

  • Technical University of Berlin

External person

YuPing Jia

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics

External person

B. R. Mehta

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Sheetal Dewan

  • University of Delhi

External person

Jae-Rynn Ryou

  • University of Houston

External person

Wei Hong

  • South-Central University for Nationalities

External person

Zhifeng Shi

  • Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China.

External person

Kaiyan He

  • College of Physics Science & Technology, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Guangxi University, Nanning 530004, China

External person

Yue Wang

  • Chinese Academy of Sciences

External person

Joon-Seop Kwak

  • Sunchon National University

External person

Shivkant Singh

  • University of Houston

External person

Meshal Alawein

  • University of California, Berkeley, CA 94720, United States.

External person

Serdal Okur

  • Structured Materials Industries, Inc., Piscataway, United States

External person

Zhoulyu Rao

  • University of Houston

External person

Yang Wang

  • Lehigh University

External person

Gary S. Tompa

  • Structured Materials Industries, Inc., Piscataway, United States

External person

Ti Li

  • Arizona State University
  • Department of Physics

External person

Martin Guttmann

  • Technical University of Berlin

External person

XiaoJuan Sun

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics

External person

Nam In Kim

  • RandD Center, Rocket Electric, 147-46 Yangil-ro, Buk-gu, Gwangju, 500-866, South Korea

External person

Karan Mehta

  • Georgia Institute of Technology
  • Center for Compound Semiconductors

External person

James F. Gilchrist

  • Lehigh University

External person

Binxian Yang

  • South-Central University for Nationalities

External person

S.-C. Shen

  • Georgia Institute of Technology

External person

Yingda Qian

  • College of Physics Science & Technology, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Guangxi University, Nanning 530004, China

External person

Yunbin He

  • Hubei University

External person

F. Genty

  • ComUE Paris-Saclay
  • Université Paris-Saclay
  • Université de Lorraine

External person

Keith R. Evans

  • Kyma Technologies, Inc.

External person

Yongming Zhao

  • Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

External person

Tanya Paskova

  • Kyma Technologies, Inc.
  • North Carolina State University
  • Department of Materials Science and Engineering
  • Department of Materials Science and Engineering

External person

Jing Zhang

  • Lehigh University

External person

J. Decobert

  • CEA
  • III-V Lab

External person

HeNan Liu

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics

External person

Zhenzhou Cao

  • South-Central University for Nationalities

External person

Zhijian Jin

  • Shanghai Jiao Tong University

External person

Shiping Guo

  • Advanced Micro-Fabrication Equipment Inc.

External person

Marcel Schilling

  • Technical University of Berlin

External person

An’ge Wang

  • Huazhong University of Science and Technology

External person

Renli Liang

  • Huazhong University of Science and Technology

External person

Liang Chen

  • Jilin University

External person

Mojtaba Asadirad

  • University of Houston

External person

Baolin Zhang

  • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China.

External person

Z. J. Zhao

  • East China Normal University
  • University of California Office of the President

External person

T. Harter

  • University of California at Davis

External person

Zhuo Hui Wu

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

Bing Wang

  • Tongji University

External person

Jason Hoo

  • Advanced Micro-Fabrication Equipment Inc. Shanghai, 201201, China.

External person

Hongwei Li

  • Advanced Micro-Fabrication Equipment Inc.
  • University of Bergen

External person

Jin Min Li

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

Yusong Zhi

  • Beijing University of Posts and Telecommunications

External person

Jin Hou

  • Hubei Key Laboratory of Intelligent Wireless Communications
  • South-Central University for Nationalities

External person

Jianzhe Liu

  • Zhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321026, China

External person

A. I. Packman

  • Northwestern University

External person

Hanxiao Liu

  • Arizona State University
  • Department of Physics

External person

Keon Hwa Lee

  • University of Houston
  • Korean Photonics Technology Institute, Gwangju, South Korea

External person

HuaTong

  • Lehigh University
  • Center for Optical Technologies

External person

Le Zhao

  • Lehigh University
  • Center for Optical Technologies

External person

Hao-Chung Kuo

  • National Yang Ming Chiao Tung University

External person

Hee Jin Kim

  • Georgia Institute of Technology
  • Center for Compound Semiconductors

External person

Anastassios Mavrokefalos

  • University of Houston

External person

Sukwon Choi

  • Pennsylvania State University

External person

J. Streque

  • GT-Lorraine

External person

Tom Salagaj

  • Structured Materials Industries, Inc., Piscataway, United States

External person

Xu Han

  • Stanford University

External person

Wei Wu

  • Tsinghua University

External person

Shan Li

  • Beijing University of Posts and Telecommunications

External person

Xinke Liu

  • Shenzhen University, Shenzhen, 518060, CHINA.

External person

Zhenping Wu

  • Beijing University of Posts and Telecommunications

External person

Shiping Gu

  • Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China

External person

Haiding Sun

  • University of Science and Technology of China

External person

J. Leymarie

  • Universite Blaise Pascal
  • Institut Pascal
  • CNRS

External person

Zhiqiang Liu

  • Development Center
  • CAS - Institute of Semiconductors

External person

R. Singh

  • Indian Institute of Technology Delhi

External person

Baishakhi Mazumder

  • Université de Rouen

External person

Kewei Sun

  • Arizona State University
  • Department of Physics

External person

Weihua Tang

  • Beijing University of Posts and Telecommunications

External person

Kangkai Tian

  • Hebei University of Technology

External person

Zhiming Shi

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics

External person

E. R. Atwill

  • University of California at Davis

External person

Wooram Youn

  • University of Florida
  • Department of Materials Science and Engineering

External person

B. R. Tak

  • Indian Institute of Technology Delhi

External person

Mangalampalli Ravikanth

  • Department of Chemistry, Indian Institute of Technology Bombay, Mumbai, Maharashtra, INDIA.

External person

Sung-Nam Lee

  • Korea Polytechnic University

External person

Long Yan

  • Chinese Academy of Agricultural Sciences

External person

Mei Cui

  • Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang, China.
  • University of Chinese Academy of Sciences, Beijing, 100049, China.

External person

Monir Rychetsky

  • Technical University of Berlin

External person

Jiean Jiang

  • Ningbo Institute of Materials Technology and Engineering (NIMTE)
  • Chinese Academy of Sciences
  • University of Chinese Academy of Sciences

External person

Xin Yu

  • Research school of Engineering, Australian National Univeristy, Acton, Australian Capital Territory Australia 2601

External person

Chunyong Yang

  • Hubei Key Laboratory of Intelligent Wireless Communications
  • South-Central University for Nationalities

External person

James Spencer Lundh

  • Pennsylvania State University

External person

CuiHong Kai

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics
  • University of Chinese Academy of Sciences

External person

Bernd Witzigmann

  • University of Kassel

External person

Jingyuan Chu

  • Shanghai Jiao Tong University

External person

Peigang Li

  • Beijing University of Posts and Telecommunications

External person

Jun Xi Wang

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

P. L. Bonanno

  • CNRS
  • Georgia Institute of Technology

External person

R. Puybaret

  • ComUE Paris-Saclay
  • GT Lorraine
  • Université Paris-Saclay
  • CentraleSupélec

External person

Zuyong Yan

  • Beijing University of Posts and Telecommunications

External person

Saniul Haq

  • Georgia Institute of Technology
  • Center for Compound Semiconductors

External person

J. D. Drummond

  • CSIC
  • Desert Research Institute

External person

Alec M. Fischer

  • Arizona State University

External person

Jianping Liu

  • CAS - Suzhou Institute of Nano-Tech and Nano-Bionics

External person

Prashant Bisht

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Pengchong Li

  • Jilin University

External person

Bhera Ram Tak

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Yue Zhao

  • University of California at Berkeley
  • Department of Materials Science and Engineering
  • Shanghai Jiao Tong University

External person

Ravi Pathak

  • Indian Institute of Technology Delhi

External person

Ke Jiang

  • State Key Laboratory of Luminescence and Applications
  • CAS - Changchun Institute of Optics Fine Mechanics and Physics
  • Center of Materials Science and Optoelectronics Engineering
  • University of Chinese Academy of Sciences

External person

James F. Gilchrist

  • Department of Chemical Engineering
  • Lehigh University
  • Center for Optical Technologies

External person

F. Réveret

  • Universite Blaise Pascal
  • Institut Pascal
  • CNRS

External person

Jith Sarker

  • Department of Materials Design and Innovation, University at Buffalo-SUNY, Buffalo, New York 14260, USA

External person

Hongli Suo

  • Beijing University of Technology

External person

Takahiro Toma

  • Lehigh University
  • Center for Optical Technologies

External person

Jun Zhang

  • Anhui University

External person

Hao Long

  • South-Central University for Nationalities

External person

Jeomoh Kim

  • LG Corporation

External person

P.D. Yoder

  • Georgia Institute of Technology

External person

J. T. Zou

  • East China Normal University

External person

Yong Wang

  • Hong Kong University of Science and Technology
  • Chinese Academy of Sciences

External person

Ashok Kumar Kapoor

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Yang Gao

  • University of Connecticut

External person

Can Ma

  • South-Central University for Nationalities

External person

Ingrid Koslow

  • Technical University of Berlin

External person

Jian Chang Yan

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

Georgios G. Roumeliotis

  • Technical University of Berlin

External person

Franky So

  • University of Florida
  • Department of Materials Science and Engineering
  • Dept. of Mat. Sci. and Engineering

External person

Haochung Kuo

  • National Yang Ming Chiao Tung University

External person

Junmei Li

  • Chinese Academy of Sciences
  • Ningbo Institute of Materials Technology and Engineering (NIMTE)
  • Chinese Academy of Sciences

External person

F. Boano

  • Polytechnic University of Turin

External person

P. Disseix

  • Universite Blaise Pascal
  • Institut Pascal
  • CNRS

External person

Guangyu Jiang

  • Shanghai Superconductor Technology Co., Ltd 200240 Shanghai People's Republic of China

External person

Michael Lehmann

  • Technical University of Berlin

External person

Degang Zhao

  • State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China.

External person

DaBing Li

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics

External person

W. X. Lv

  • East China Normal University

External person

You Wu

  • CAS - Changchun Institute of Optics Fine Mechanics and Physics
  • University of Chinese Academy of Sciences
  • State Key Laboratory of Luminescence and Applications
  • Center of Materials Science and Optoelectronics Engineering

External person

Zhechuan Feng

  • College of Physics Science and Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi University, Nanning 530004, China

External person

Valipe Ramgopal Rao

  • Indian Institute of Technology Delhi

External person

Norman Susilo

  • Technical University of Berlin

External person

Zeng Liu

  • Beijing University of Posts and Telecommunications

External person

Michael Narodovitch

  • Technical University of Berlin

External person

Liang Xu

  • School of Medicine
  • Skaggs School of Pharmacy and Pharmaceutical Sciences, University of California San Diego, San Diego, CA, United States

External person

Jiangtao Shi

  • Shanghai Jiao Tong University

External person

Sudheer Kumar

  • Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

External person

Ya Nan Guo

  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

External person

Jie'an Jiang

  • Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang, China.
  • University of Chinese Academy of Sciences, Beijing, 100049, China.

External person

J.-H. Ryou

  • Department of Mechanical Engineering, The University of Houston, Texas, USA

External person

Ashutosh Kumar

  • Indian Institute of Technology Delhi

External person

Won Hoe Koo

  • University of Florida
  • Department of Materials Science and Engineering

External person

X. Li

  • GT-Lorraine
  • School of Electrical and Computer Engineering
  • Georgia Institute of Technology

External person